TEMPERATURE DEPENDENCE OF EJECTION PATTERNS IN Ge SPUTTERING

Journal Article · Sun Dec 01 04:00:00 EST 1963 · Journal of Applied Physics (U.S.)

DOI:https://doi.org/10.1063/1.1729245· OSTI ID:4153116

Anderson, G S; Wehner, G K; Olin, H J

Atom ejection patterns from the Ge (100) andd (110) surfaces were studied for 100 to 800 ev Ne/sup +/, Ar/sup +/, Kr/sup +/, and Xe/sup +/ ion bombardment as a function of target temperature in the range 0 to 350 deg C. For ion energies below a critical value dependent on the bombarding ion, atom ejection patterns are always observed; while for higher bombarding energies the patterns appear only when the target temperature exceeds a certain value. From these data an activation energy of 1.3 ev for diffision of defects was obtained. The experimental results indicate that very little damage to the lattice results from ion bombardment when the ion energy stays below a critical value (Ar, Ne: approximates 200 ev; Kr, Xe: approximates 400 ev). At higher ion energy the damage becomes more severe and higher target temperatures are required for annealing the damage between subsequent ion collisions. (auth)

• Research Organization: General Mills, Inc., Minneapolis
• Sponsoring Organization: USDOE
• NSA Number: NSA-18-002526
• OSTI ID: 4153116
• Journal Information: Journal of Applied Physics (U.S.), Journal Name: Journal of Applied Physics (U.S.) Vol. Vol: 34; ISSN JAPIA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ANNEALING
ARGON
ATOMS
DEFECTS
DIFFUSION
ENERGY RANGE
EXCITATION
GERMANIUM
ION BEAMS
IRRADIATION
KRYPTON
LATTICES
MEASURED VALUES
NEON
PHYSICS
SPUTTERING
SURFACES
TARGETS
TEMPERATURE
XENON