ATOM EJECTION IN LOW ENERGY SPUTTERING OF SINGLE CRYSTALS OF fcc METALS AND OF Ge AND Si
Journal Article
·
· Journal of Applied Physics (U.S.)
The spatial distribution of atoms ejected from low-index planes of Cu, Ni, Au, Al, Ge, and Si were studied for bombardment by Hg/sup +/, Ne/sup +/, and Ar/sup +/ to 500 ev. The atom ejection for Hg/sup +/ bombardment of Ge planes (12 deg apart) belonging to the (110) zone was investigated. For the fcc crystals, ejection was observed in (110) directions at all energies, in (100) directions at higher energies, and in (411) directions under certain conditions. The ejection in the (110) and (100) directions is the result of focusons intercepting the surface with sufficient energy to cause a surface atom to be ejected. For atom ejection in (411) directions, a (110) focuson may intercept and eject a surface atom which is in a twin position rather than a normal position. For ion bombardment of Ge and Si, atom ejection is observed in (111) and (100) directions. Possibly many of the natural interstitial positions are filled near the surface as a result of the bombardment and the structure resembles more that of a bcc structure. The systematic deviation in ejection directions from the associated crystallographic direction observed for the Hg/sup +/ bombardment of Ge surfaces suggests that the atomic collisions resulting in atom ejection for Ge and Si occur in outer surface layers. (auth)
- Research Organization:
- General Mills Electronics Group, Minneapolis
- NSA Number:
- NSA-16-022758
- OSTI ID:
- 4825073
- Journal Information:
- Journal of Applied Physics (U.S.), Journal Name: Journal of Applied Physics (U.S.) Vol. Vol: 33; ISSN JAPIA
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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