Energy dependence of channeling analysis in implantation damaged Al
Ion channeling and backscattering measurements along the (110) axis of implantation disorder in Al single crystal are reported as a function of the He analyzing beam energy (0.5-2.0 MeV). For 100-keV N$sup +$ implants (8 x 10$sup 16$ ions/cm$sup 2$), appreciable dechanneling is observed near the end of the projected ion range (2400 A) and the minimum yield increases with decreasing analyzing beam energy. A different behavior was observed for 150-keV Zn$sup +$ implantation into Al with fluences of 6 x 10$sup 15$ and 1.2 x 10$sup 16$ ions/ cm$sup 2$, respectively. The minimum yield in the Zn-implanted region (790 A) shows a $Root$E dependence on the energy E of the analysis beam. These channeling measurements show that the nature of the disorder for light and heavy mass implants in Al is different. The energy dependence of the minimum yield points out that the defects for the N implant are consistent with random scattering centers while for Zn implants extended defects with associated strains, like dislocations, are produced. The energy dependence of the critical angle can also be related to the defect structure. (auth)
- Research Organization:
- Sandia Labs., Albuquerque, N.Mex. (USA)
- NSA Number:
- NSA-33-007873
- OSTI ID:
- 4151057
- Report Number(s):
- SAND--75-5615
- Country of Publication:
- United States
- Language:
- English
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