XAFS Investigation of Nanoparticle Formation in {sup 64}Zn{sup +} Ion Implanted and Thermo Oxidized Si

Journal Article · Sat Dec 15 04:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618160121· OSTI ID:22945113

Khramov, E. V. ^[1]

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1. National Research Center “Kurchatov Institute” (Russian Federation)

The single crystal CZ n-Si(100) substrates with electron concentration n{sub o} = 5 × 10{sup 16} cm{sup −3} were implanted by {sup 64}Zn{sup +} ions with dose of 5 × 10{sup 16} cm{sup −2} and energy of 50 keV. During implantation the ion beam current density was less than 0.5 μA/cm{sup 2} to avoid the substrate magnetically heating. After implantation, the plates were subjected to isochronous for one hour heat treatment in oxygen atmosphere at temperatures from 400 up to 1000{sup o}C with a step of 100{sup o}C. Zn K-edge EXAFS spectra were measured in fluorescent mode. Si(111) channel-cut monochromator was used for energy scanning; energy resolution ΔE/E = 2 × 10{sup –4}. According to Zn K-edge EXAFS data, all Zn implanted in Si at 900{sup o}C is fully oxidized: an absolute maximum of EXAFS Fourier transform at R ~ 1.6 Å corresponds to Zn–O distance. Based on XANES data, we suggest an interaction between implanted Zn atoms and Si support.

• OSTI ID: 22945113
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 16 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
BEAM CURRENTS
CONTROLLED ATMOSPHERES
CURRENT DENSITY
ELECTRONS
ENERGY RESOLUTION
FINE STRUCTURE
FLUORESCENCE
FOURIER TRANSFORMATION
HEAT TREATMENTS
ION BEAMS
ION IMPLANTATION
KEV RANGE
MONOCHROMATORS
MONOCRYSTALS
N-TYPE CONDUCTORS
NANOPARTICLES
SILICON
X-RAY SPECTROSCOPY
ZINC IONS