X-ray absorption fine structure (XAFS) studies of cobalt silicide thin films

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:302413

Naftel, S J; Coulthard, I; Hu, Y; Sham, T K; Zinke-Allmang, M ^[1]

---

1. Univ. of Western Ontario, London, Ontario (Canada)

Cobalt silicide thin films, prepared on Si(100) wafers, have been studied by X-ray absorption near edge structures (XANES) at the Si K-, L{sub 2,3}- and Co K-edges utilizing both total electron (TEY) and fluorescence yield (FLY) detection as well as extended X-ray absorption fine structure (EXAFS) at the Co K-edge. Samples made using DC sputter deposition on clean Si surfaces and MBE were studied along with a bulk CoSi{sub 2} sample. XANES and EXAFS provide information about the electronic structure and morphology of the films. It was found that the films studied have essentially the same structure as bulk CoSi{sub 2}. Both the spectroscopy and materials characterization aspects of XAFS (X-ray absorption fine structures) are discussed.

• Sponsoring Organization: Natural Sciences and Engineering Research Council of Canada, Ottawa, ON (Canada)
• OSTI ID: 302413
• Report Number(s): CONF-980405--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
COBALT SILICIDES
ELECTRONIC STRUCTURE
EXPERIMENTAL DATA
FINE STRUCTURE
MORPHOLOGY
RADIATION ABSORPTION ANALYSIS
THIN FILMS
X-RAY FLUORESCENCE ANALYSIS