Wet oxidation of AlGaAs vs. AlAs: A little gallium is good
Conference
·
OSTI ID:414333
- Sandia National Labs., Albuquerque, NM (United States). Photonics Research Dept.
Buried oxides formed from the wet oxidation of AlGaAs alloys, rather than AlAs, are found to be superior in terms of oxidation isotropy, mechanical stability, and strain. It is not surprising that vertical-cavity surface-emitting lasers (VCSELs) using AlGaAs oxide layers as current apertures have shown promising reliability as compared to VCSELs using AlAs layers. Comparisons of lifetime data for VCSELs with differing oxide layers is presented. The beneficial properties of oxides converted from AlGaAs alloys are found to provide robust device processing of reliable VCSELs and may play an important role in other advanced optoelectronic devices.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 414333
- Report Number(s):
- SAND--96-2007C; CONF-961113--5; ON: DE96014029
- Country of Publication:
- United States
- Language:
- English
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