Amorphization threshold in Si-implanted strained SiGe alloy layers

Technical Report · Thu Dec 01 04:00:00 EST 1994

DOI:https://doi.org/10.2172/41378· OSTI ID:41378

Simpson, T W; Love, D; Endisch, E; Goldberg, R D; Mitchell, I V ^[1]; Haynes, T E ^[2]; Baribeau, J M ^[3]

---

1. Univ. of Western Ontario, London, Ontario (Canada). Dept. of Physics
2. Oak Ridge National Lab., TN (United States). Solid State Div.
3. National Research Council, Ottawa, Ontario (Canada). Inst. for Microstructural Science

The authors have examined the damage produced by Si-ion implantation into strained Si{sub 1{minus}x}Ge{sub x} epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si{sub 1{minus}x}Ge{sub x} (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si{sub 1{minus}x}Ge{sub x}, and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Ontario Centre for Materials Research, Kingston, ON (Canada)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 41378
• Report Number(s): CONF-941144--105; ON: DE95008901
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
EXPERIMENTAL DATA
GERMANIUM ALLOYS
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SILICON ALLOYS
SILICON IONS
SUPERLATTICES