Damage saturation during high-energy ion implantation of Si[sub 1[minus][ital x]]Ge[sub [ital x]]

Journal Article · Mon Dec 28 04:00:00 EST 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.107989· OSTI ID:7164832

Holland, O W; Haynes, T E ^[1]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6057 (United States)

Saturation of radiation damage during MeV Si[sup +]-ion implantation of unstrained Si[sub 1[minus][ital x]]Ge[sub [ital x]] ([ital x]=0.15,0.50) alloy layers, as well as bulk Ge, was investigated. First observed in self-ion irradiated Si, damage saturation is distinguished by a low concentration of lattice defects in the near-surface region ahead of the ions' end-of-range which remains constant over an extended range of implantation dose. A previously proposed model accounted for saturation by assuming that damage nucleates homogeneously during ion irradiation. Different mechanisms for nucleation of damage are discussed and substrate conditions are specified under which each dominates. A characteristic temperature is defined for each substrate above which damage nucleates primarily by a homogeneous mechanism. Results are presented which show the damage saturation occurs above this characteristic temperature but not below, thus establishing homogeneous nucleation as a necessary condition for the occurrence of damage saturation, as previously suggested.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 7164832
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 61:26; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALLOY SYSTEMS
ALLOYS
BINARY ALLOY SYSTEMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
DISTRIBUTION FUNCTIONS
ELEMENTS
FUNCTIONS
GERMANIUM
GERMANIUM ALLOYS
GROWTH
ION IMPLANTATION
METALS
NUCLEATION
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SATURATION
SEMIMETALS
SILICON
SILICON ALLOYS
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE