RESEARCH IN RADIATION DAMAGE IN SEMICONDUCTORS. Final Report

Technical Report · Tue Feb 09 23:00:00 EST 1960

OSTI ID:4123239

Harrity, J W; Horiye, H; van Lint, V A.J.; Wikner, E G

The electrical properties (Hall effect, conductivity, and carrier lifetime) of germanium and silicon were studied as a function of electron and neutron irradiation. The carrier removal rate was 4.0 electrons per centimeter of 25-Mev electron path in germanium at 78 deg K, compared with 0.18 in silicon at 300 deg K. Two hole-trapping levels were found in germanium with energies of 0.15 and 0.27 ev. Evidence of annealing was observed between 78 deg K and room temperature in germanium. As a result of these studies, a radiation-resistant dicde was fabricated using p-type ger manium with a resistivity of approximately 0.20 ohm-cm as the base material. (C.J.G.)

• Research Organization: General Atomic Div., General Dynamics Corp., San Diego, Calif.
• NSA Number: NSA-15-000712
• OSTI ID: 4123239
• Report Number(s): GA-1201; AFCRC-TR-60-117; AD-2
• Country of Publication: United States
• Language: English

Related Subjects

ANNEALING
DIODES
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ELECTRON TUBES
ELECTRONS
FABRICATION
GERMANIUM
HALL EFFECT
LOW TEMPERATURE
METALS, CERAMICS, AND OTHER MATERIALS
NEUTRON BEAMS
RADIATION EFFECTS
SEMICONDUCTORS
SILICON
STABILITY
TEMPERATURE
TRACER TECHNIQUES
TRAPS