MICROWAVE MEASUREMENTS OF HALL MOBILITIES IN SEMICONDUCTORS
The Hall mobilities of germanium single crystals were measured with a microwave frequency of 9000 Mc/sec over the temperature range 30 to 300 deg K. A rectangular sample occupied the central part of a wall of a rectangular cavity, which was doubly degenerate in the TE/sub 101/ mode and in the TE/sub 011/ mode at a single resonance microwave frequency. The external magnetic field and the microwave field associated with one of the two modes gave rise to the other mode of oscillation, owing to excitation by the microwave Hall field. The theoretical analysis was verified by measurements on an n-type sample having a room temperature resistivity of 0.40 ohm cm. The measured Hall mobility at microwave frequencies (with a size correction) was compared with the d-c Hall mobility between 30 and 300 deg K. The maximum discrepancy was 15%. The estimated experimental error in the microwave measurement was 16%. The magnetic field dependence of the microwave Hall mobility in a p-type sample, having a room temperature resistivity of 0.77 ohm cm, was in qualitative agreement with the d-c results. (auth)
- Research Organization:
- Ames Lab., Ames, Iowa
- DOE Contract Number:
- W-7405-ENG-82
- NSA Number:
- NSA-15-029793
- OSTI ID:
- 4842389
- Report Number(s):
- IS-336
- Country of Publication:
- United States
- Language:
- English
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