OXIDATION OF A NICKEL-2/percent/ ThO$sub 2$ ALLOY AND THE LOGARITHMIC RATE LAW OF OXIDATION
Technical Report
·
OSTI ID:4117100
The oxidation of pure nickel containing a dispersion of submicron size ThO/sub 2/ particles was investigated in the range 600 to 1000 deg C. At 600 and 700 deg C, oxidation was described by a parabolic equation. At 950 and 1000 deg C, a mixed parabolic relationship (partial control by an interface reaction) applied. Logarithmic oxidation, concurrent with a minimum in the oxidation rate, occurred at intermediate temperatures of 800, 850, and 900 deg C. The partially controlling interface reaction at 950 and 1000 deg C is interpreted to be activated adsorption of oxygen at the oxygenoxide interface. A logarithmic rate law for oxide film formation is derived by considering oxygen adsorption as the controlling process. Application of this theory is discussed with respect to the present work on nickel and previous work on the formation of thin oxide films on metals. (auth)
- Research Organization:
- General Electric Co. Hanford Atomic Products Operation, Richland, Wash.
- DOE Contract Number:
- AT(45-1)-1350
- NSA Number:
- NSA-18-012035
- OSTI ID:
- 4117100
- Report Number(s):
- HW-79350
- Country of Publication:
- United States
- Language:
- English
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