$sup 4$He-induced damage in superconducting Nb-Ge films

Journal Article · Mon Nov 10 04:00:00 EST 1975 · Phys. Rev. Lett., v. 35, no. 19, pp. 1290-1293

OSTI ID:4102852

Poate, J M; Testardi, L R; Storm, A R; Augustyniak, W M

Defects introduced into superconducting Nb-Ge films by 2-MeV $sup 4$He particles produce a T/subc/-resistance-ratio correlation similar to that for as- grown films and a T/subc/-lattice-parameter correlation resembling both film and bulk behavior. It is suggested that simple antistructure defects in a perfect lattice are not primarily responsible for lowering T/subc/ for the case of $sup 4$He damage in the sputtered films. (AIP)

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• NSA Number: NSA-33-018745
• OSTI ID: 4102852
• Journal Information: Phys. Rev. Lett., v. 35, no. 19, pp. 1290-1293, Journal Name: Phys. Rev. Lett., v. 35, no. 19, pp. 1290-1293; ISSN PRLTA
• Country of Publication: United States
• Language: English

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