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BASIC RADIATION DAMAGE STUDIES. Progress Report for Period December 15, 1959-December 15, 1960

Technical Report ·
OSTI ID:4095064
A study of the effect of absorbed hydrogen on low-energy electron bombardment was made. Low-temperature anneallng of irradiated n-type germanium was studied. Further studies were made of the carrier trapping effects that are observed in irradiated p-type germanium at liquid nitrogen temperature. A theoretical study is being made of ths electronic structure of the E-center in irradiated silicon. (W.L.H.)
Research Organization:
Purdue Univ., Lafayette, Ind.
NSA Number:
NSA-15-006452
OSTI ID:
4095064
Report Number(s):
TID-11310
Country of Publication:
United States
Language:
English

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Related Subjects

ABSORPTION
ANNEALING
ATOMIC MODELS
CARRIERS
CRYSTALS
DEFECTS
ELECTRON BEAMS
ELECTRONIC STRUCTURE
GERMANIUM
HYDROGEN
IRRADIATION
LATTICES
LOW TEMPERATURE
METALS, CERAMICS, AND OTHER MATERIALS
RADIATION EFFECTS
SILICON
TRAPS