BASIC RADIATION DAMAGE STUDIES

Technical Report · Tue Apr 01 04:00:00 EST 1958

OSTI ID:4057898

Studies of electron bombardment of germanium and silicon near the threshold of bulk damage were made. For germanium the plot of conductivity vs. electron dose showed a rise to a maximum and then a linear decrease. The energy dependence of the derivative of the carrier density with respect to electron flux was determined. The results are interpreted in terms of a surface effect; the surface treatment was found to have a marked effect on the behavior under low- energy irradiation. Tbe radiation effects on the photoconductivity and surface conductance of n- and p-type germanium were studied. A model of the germanium surface is proposed. The effects of high-energy radiation on the photoconductivity were studied and interpreted in terms of bands and defect levels. On the basis of electron irradiation studies of silicon at 4.5 Mev and lower energies, it is concluded that some deep-lying levels in silicon depend on heat treatment, surface behavior, and current intensity. (D.L.C.)

• Research Organization: Purdue Univ., Lafayette, Ind.
• NSA Number: NSA-15-013434
• OSTI ID: 4057898
• Report Number(s): TID-11922
• Country of Publication: United States
• Language: English

Related Subjects

CARRIERS
CURRENTS
DISTRIBUTION
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ENERGY
ENERGY LEVELS
GERMANIUM
HANDS
HEAT TREATMENTS
IRRADIATION
LEVELS
MEASURED VALUES
METALS, CERAMICS, AND OTHER MATERIALS
PHOTOCONDUCTIVITY
PHOTOELECTRIC EFFECT
RADIATION DOSES
RADIATION EFFECTS
SEMICONDUCTORS
SILICON
SURFACES