Electrical pulse burnout testing of light-emitting diodes

Conference · Mon Dec 01 04:00:00 EST 1975 · IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2510-2515

OSTI ID:4094466

Kalma, A H; Fischer, C J

Electrical pulse burnout thresholds were measured in GaAs, GaAsP, and GaP light-emitting diodes (LEDs) by studying the degradation in light output and the change in I-V characteristics both during the pulse and in the steady state. Pulse widths ranging from a few hundred nsec to 100 $mu$sec were used. Light output degradation was the most sensitive parameter and was used to determine the thresholds. Just above threshold, damage is caused by an increase in generation- recombination current in the space-charge retion. This current is non-radiative and the light output drops, but the damage is not catastrophic. At higher power, the junction burns through and shunt resistance paths are formed which more drastically degrade the light output. The experimental data match reasonably with the theoretical Wunsch--Bell/Tasca model if a burnout area of $sup 1$$/$$sub 10$ the junction area is assumed. Both the adiabatic term (At$sup -1$) and the heat flow term (Bt$sup -$/sup $sup 1$$/$$sub 2$/) contribute in all devices, and the equilibrium term (C) contributes in some GaAsP devices. The scatter in the data for GaAs devices is greater than that for GaAsP devices, apparently because the former types have a significant fraction of mavericks with lower-than-normal thresholds. The use of LEDs to examine electrical pulse burnout is advantageous because the light output is quite sensitive to damage and the combined measurement of optical and electrical properties provides additional information about the mechanisms involved. (auth)

• Research Organization: IRT Corporation, San Diego, CA
• NSA Number: NSA-33-020375
• OSTI ID: 4094466
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2510-2515
• Country of Publication: United States
• Language: English

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