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Electrical pulse burnout of transistors in intense ionizing radiation

Conference · · IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2528-2532
OSTI ID:4087587
;
Tests examining possible synergistic effects of electrical pulses and ionizing radiation on transistors were performed and energy/power thresholds for transistor burnout determined. The effect of ionizing radiation on burnout thresholds was found to be minimal, indicating that electrical pulse testing in the absence of radiation produces burnout-threshold results which are applicable to IEMP studies. The conditions of ionized transistor junctions and radiation induced current surges at semiconductor device terminals are inherent in IEMP studies of electrical circuits. (auth)
Research Organization:
Sandia Labs., Albuquerque, NM
NSA Number:
NSA-33-020378
OSTI ID:
4087587
Conference Information:
Journal Name: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2528-2532
Country of Publication:
United States
Language:
English

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Related Subjects

*TRANSISTORS-- PHYSICAL RADIATION EFFECTS
440200* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
FAILURES
INTERNAL ELECTROMAGNETIC PULSES
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
OVERCURRENT
SEMICONDUCTOR DEVICES
SURGES
TESTING