Radiation-induced surface states in MOS devices
The fact that ionizing radiation causes an increase in both oxide charge and fast surface-state density in MOS devices is well known. The relative role of each damage mechanism in total threshold voltage change with radiation, however, is not always apparent. For example, n-channel MOS transistors using a silicon dioxide gate insulator often show a reversal in the direction of the threshold shift after 10$sup 5$ to 10$sup 6$ rads(Si) total dose. This reversal could be due to a reduced net oxide charge or an increase in the interface-state density, or some combination of both mechanisms. This paper describes a series of radiation experiments on MOS capacitors which define, in greater detail, the nature of radiation-induced surface states, their dependence on radiation dose and bias, and their dependence on the MOS fabrication process. (auth)
- Research Organization:
- Rockwell International, Anaheim, CA
- NSA Number:
- NSA-33-020333
- OSTI ID:
- 4090092
- Journal Information:
- IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2193-2196, Journal Name: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2193-2196; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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