Radiation effects in charge coupled devices

Conference · Mon Dec 01 04:00:00 EST 1975 · IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2639-2644

OSTI ID:4083532

Williams, R A; Nelson, R D

Charge coupled devices (CCD s) exhibit a number of advantages (low cost, low power, high bit density) in their several applications (serial memories, imagers, digital filters); however, fairly elementary theoretical considerations indicate that they will be very vulnerable to permanent radiation damage, by both neutrons and ionizing radiation, and to transient upset by pulsed ionizing radiation. Although studies of permanent ionizing-radiation damage in CCD's have been reported, little information has been published concerning their overall nuclear radiation vulnerability. This paper presents a fairly comprehensive experimental study of radiation effects in a 256-cell surface-channel, CCD shift- register. A limited amount of similar work is also presented for a 128-cell surface-channel device and a 130 cell peristaltic CCD shift register. The radiation effects phenomena discussed herein, include transient-ionizing- radiation responses, permanent ionizing- radiation damage to transfer efficiency, charge-carrying capacity and input transfer gate bias, and neutron damage to storage time--determined from dark current and charge-up time measurements. (auth)

• Research Organization: Naval Research Lab., Washington, DC
• NSA Number: NSA-33-020357
• OSTI ID: 4083532
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2639-2644
• Country of Publication: United States
• Language: English

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NEUTRONS
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