ELECTRON TEMPERATURE DEPENDENCE OF THE RECOMBINATION COEFFICIENT IN PURE HELIUM
Journal Article
·
· Physical Review (U.S.) Superseded in part by Phys. Rev. A, Phys. Rev. B: Solid State, Phys. Rev. C, and Phys. Rev. D
The phenomenon of "afterglow quenching" was employed to determine the electron temperature dependence of the electron-ion recombination coefficient in plasmas produced in purified helium (estimated impurity 1: 10/sup 9/). The total visible light intensity was studied as a function of electron temperature. By means of 1.5% bandwidth filters, the light intensity of two helium spectral lines (5876 A and 3888 A) was also investigated. It was found that the recombioation coefficient for highly purified belium varied as the minus three-halves power of the electron temperature from 300 to approximately 15OO deg K, s electron densities of - lO/sup 11//cm/sup 3/, and gas pressures from 12.6 to 30.3 mm Hg. At 300 deg K (temperature determined from collision frequency measurements), the recombination ccefficient in purified helium was found to be (8.9 plus or minus 0.5) x 10/sup -9/ cm/sup 3//ion sec. It was found that both the recombination coefficient and its electron temperature dependence are strongly influenced by the addition of controlled amounts (2 x 10/sup -4/ to 1300 x 10/sup -4/%) of neon impurities. (auth)
- Research Organization:
- Univ. of Illinois, Urbana
- NSA Number:
- NSA-15-013517
- OSTI ID:
- 4076684
- Journal Information:
- Physical Review (U.S.) Superseded in part by Phys. Rev. A, Phys. Rev. B: Solid State, Phys. Rev. C, and Phys. Rev. D, Journal Name: Physical Review (U.S.) Superseded in part by Phys. Rev. A, Phys. Rev. B: Solid State, Phys. Rev. C, and Phys. Rev. D Vol. Vol: 121; ISSN PHRVA
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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