HALL COEFFICIENT AND RESISTIVITY OF A Mg$sub 2$Si SINGLE CRYSTAL FROM 4 K TO 300 K
The Hall coefficient and resistivity of an n-type single crystal of Mg/ sub 2/Si with a room temperature carrier concentration of 3.5 x 10/sup 1//sup 7/ cm/sup -//sup 3/ was measured at 4.2 to 300 deg K. The Hall coefficient reached a peak value of 220 cm/sup 3// coulomb at a temperature of 17.4 deg K and a saturation value of 76 cm/sup 3//coulomb below a temperature of about 7 The Hall mobility of the sample had a temperature dependence of T/sup -//sup 2//sup ./ /sup 2/ at high temperatures and a temperatare dependence of T/sup +//sup 3//sup .//sup 1/ at low temperatures. The high-temperature measurements confirmed, but added nothing new, some of the work of Morris, Redin, and Danielson. The lowtemperature measurements suggest a donor impurity level at 0.0045 ev below the conduction band. The low temperature data seemed to agree self-consistently with a theory of weak impurity-band conduction. On the basis of this theory, a crude estimate of the percentage of acceptor impurities compensated by donor impurities was found to be 50 plus or minus 25%. (auth)
- Research Organization:
- Ames Lab., Ames, Iowa
- NSA Number:
- NSA-15-022719
- OSTI ID:
- 4045072
- Report Number(s):
- ISC-1176
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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