Electrical and thermoelectric properties of ZnO under atmospheric and hydrostatic pressure
- Russian Academy of Sciences, Institute of Physics, Dagestan Scientific Center (Russian Federation)
- Russian Research Institute for the Synthesis of Materials (Russian Federation)
Temperature (for T = 77-400 K) and pressure (for P {<=} 8 GPa) dependences of conductivity {sigma}(T,P). Hall coefficient R{sub H}(T, P), and Seebeck coefficient Q(T) were studied in single-crystal n-ZnO samples with the impurity concentration N{sub i} = 10{sup 17} - 10{sup 18} cm{sup -3} and free-electron concentration n = 10{sup 13}-10{sup 17} cm{sup -3}. Single crystals were grown by the hydrothermal method. Dependence of the ionization energy of a shallow donor level on the impurity concentration E{sub d1}(N{sub d}) is determined, along with the pressure coefficients for the ionization energy {partial_derivative}E{sub d1}/{partial_derivative}P and static dielectric constant {partial_derivative}x/{partial_derivative}P. A deep defect level with the energy E{sub d2} = 0.3 eV below the bottom of the conduction band is found. The electron effective mass is calculated from the obtained data on the kinetic coefficients R{sub H}(T) and Q(T)
- OSTI ID:
- 21088646
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 40; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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