Effect of heat treatment on redistribution of fast diffusing impurities in polycrystalline silicon

Journal Article · Fri Jul 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341900· OSTI ID:7248441

Kumar, R; Kotnala, R K; Arora, N K; Das, B K

The effect of heat treatment on minority carrier surface recombination velocity in polycrystalline silicon samples has been examined in the temperature range (600--900 /sup 0/C) using the electron-beam induced-current mode of a scanning electron microscope. Minority carrier trap center density, calculated from minority carrier surface recombination velocity data, varying from 8.9 x 10/sup 11/ to 6.37 x 10/sup 13/ cm/sup -2/ have been measured. A finite variation in the minority carrier trap center density indicates that metallic impurities diffuse to the surface from the bulk of the sample. The activation energy of impurity atom diffusion is found to be 1.1 +- 0.1 eV.

• Research Organization: Materials Division, National Physical Laboratory, New Delhi 110012, India
• OSTI ID: 7248441
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CHARGE CARRIERS
CRYSTALS
DATA
DIFFUSION
ELECTRON MICROSCOPY
ELEMENTS
EXPERIMENTAL DATA
HEAT TREATMENTS
HIGH TEMPERATURE
IMPURITIES
INFORMATION
MICROSCOPY
NUMERICAL DATA
POLYCRYSTALS
SEMIMETALS
SILICON
SURFACE PROPERTIES
TRAPS
VERY HIGH TEMPERATURE