Light scattering tomography study of lattice defects in high quality as-grown CZ silicon wafers and their evolution during gate oxidation
Conference
·
OSTI ID:405555
- IMEC, Leuven (Belgium); and others
Wafers from silicon ingots grown in the vacancy rich regime with different crystal cooling rates have been used for investigations by infrared light scattering tomography (IR-LST), preferential defect etching and gate oxide integrity (GOI) tests. GOI evaluation was done for 6.4 mn and 15 nm gate oxides. A clear correlation is obtained between substrate defects observed by LST and Secco etching after gate oxidation and GOI. In a second experiment the effect of intentional contamination with 10{sup 12} Fe cm{sup -2} before gate oxidation is evaluated.
- OSTI ID:
- 405555
- Report Number(s):
- CONF-951231--
- Country of Publication:
- United States
- Language:
- English
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