Photoluminescence analysis of intragrain defects in multicrystalline silicon wafers for solar cells

Journal Article · Sat Sep 01 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2776003· OSTI ID:21057542

Sugimoto, H; Araki, K; Tajima, M; Eguchi, T; Yamaga, I; Dhamrin, M; Kamisako, K; Saitoh, T ^[1]

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1. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510 (Japan)

Structures of intragrain defects were investigated by photoluminescence (PL) mapping tomography in multicrystalline silicon wafers for solar cells. PL dark patterns were observed in short minority carrier diffusion length regions, and we confirmed that the patterns came from the intragrain defects. The tomography revealed that the defects have planelike structures extended to the crystal growth direction. We also found that the growth conditions affect the structures of the defects: slower solidification leads to larger defects with lower density. Origins of the defects were analyzed by low-temperature PL spectroscopy, electron backscatter diffraction pattern measurement and etch-pit observation. We concluded that the defects are metal contaminated dislocation clusters which originate from small-angle grain boundaries.

• OSTI ID: 21057542
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER LIFETIME
CRYSTAL GROWTH
DIFFUSION LENGTH
DISLOCATIONS
ELECTRON DIFFRACTION
GRAIN BOUNDARIES
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SILICON
SILICON SOLAR CELLS
SOLIDIFICATION
SPECTROSCOPY
TOMOGRAPHY