Defect energy levels in Cd-based compounds

Conference · Sun Dec 01 04:00:00 EST 1996

OSTI ID:405525

Castaldini, A; Cavallini, A; Fraboni, B; Polenta, L ^[1]

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1. Univ. di Bologna (Italy); and others

The influence of deep levels on the electrical and optical properties of semiconductors is widely acknowledged. We have utilized several complementary spectroscopic techniques to investigate the deep traps in undoped CdTe, CdTe:Cl and Cd{sub 0.8}Zn{sub 0.2}Te. The electrical activity of the defects has been studied by DLTS, PICTS and P-DLTS while their optical properties have been characterized by cathodoluminescence, CL. Various deep levels have been found and by critically comparing the results obtained with the different techniques in different samples, we were able to achieve a better understanding of the nature of the defects.

• OSTI ID: 405525
• Report Number(s): CONF-951231--; CNN: Project PB 93-1256
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
CATHODOLUMINESCENCE
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
TRAPS
ZINC TELLURIDES