Midgap traps related to compensation processes in CdTe alloys

Journal Article · Mon Dec 01 00:00:00 EST 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.56.14897· OSTI ID:554359

Castaldini, A; Cavallini, A; Fraboni, B ^[1]; Fernandez, P; Piqueras, J ^[2]

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1. INFM and Department of Physics, University of Bologna, Viale Berti Pichat 6/2, 40126 Bologna (Italy)
2. Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, E-28040 Madrid (Spain)

We study, by cathodoluminescence and junction spectroscopy methods, the deep traps located near midgap in semiconducting and semi-insulating II-VI compounds, namely, undoped CdTe, CdTe:Cl, and Cd{sub 0.8}Zn{sub 0.2}Te. In order to understand the role such deep levels play in the control of the electrical properties of the material, it appears necessary to determine their character, donor, or acceptor, in addition to their activation energy and capture cross section. Photoinduced-current transient spectroscopy and photo deep-level transient spectroscopy are used to investigate the semi-insulating (SI) samples, and a comparison of the complementary results obtained allows us to identify an acceptor trap, labeled H, and an electron trap, labeled E. Level H is common to all investigated compounds, while E is present only in CdTe:Cl samples. This provides clear experimental evidence of the presence of a deep trap in CdTe:Cl, which could be a good candidate for the deep donor level needed to explain the compensation process of SI CdTe:Cl. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 554359
• Journal Information: Physical Review, B: Condensed Matter, Vol. 56, Issue 23; Other Information: PBD: Dec 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
CATHODOLUMINESCENCE
ELECTRICAL PROPERTIES
CADMIUM ALLOYS
TELLURIUM ALLOYS
BINARY ALLOY SYSTEMS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ENERGY GAP