Analyses of compensation related defects in II-VI compounds

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:323855

Castaldini, A; Cavallini, A; Fraboni, B ^[1]; Fernandez, P; Piqueras, J ^[2]

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1. Univ. of Bologna (Italy)
2. Univ. Complutense, Madrid (Spain). Dept. de Fisica de Materiales

The deep levels present in semiconducting CdTe and semi-insulating (SI) CdTe:Cl and Cd{sub 0.8}Zn{sub 0.2}Te have been investigated by means of cathodoluminescence (CL), deep level transient spectroscopy (DLTS), photo-DLTS (PDLTS) and photo induced current transient spectroscopy (PICTS). PICTS and PDLTS can be applied to SI materials and allowed to determine whether the observed deep levels are hole or electron traps. Among the observed deep centers, the authors have focused their attention on those involved in the compensation process such as the so called center A and the deep traps located near midgap. They have identified a deep acceptor, labelled H, and a deep donor, labelled E, the latter is peculiar to CdTe:Cl and can be a good candidate for the deep donor level needed to explain the compensation process in SI CdTe:Cl.

• OSTI ID: 323855
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CDTE SEMICONDUCTOR DETECTORS
CRYSTAL DEFECTS
DOPED MATERIALS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GAMMA DETECTION
TRAPS
X-RAY DETECTION