Influence of large-scale traps on the properties of semiconductor nuclear- particle detectors
There is extensive published literature on the trapping of carriers in semiconductor detectors because the charge losses govern the energy resolution of such detectors. It is shown that the available information can be interpreted by assuming the existence of large-scale technological fluctuations of the potential in the active zone of a detector. These fluctuations appear during the compensation stage (necessary to form the active zone of a detector) and are due to an inhomogeneous distribution of impurities in the original material. This type of analysis is applied to lithium-drifted silicon detectors, radiation- defect-compensated germanium detectors, and detectors made of very pure germanium. (AIP)
- Research Organization:
- A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, Leningrad
- NSA Number:
- NSA-33-023369
- OSTI ID:
- 4054099
- Journal Information:
- Sov. Phys. - Semicond. (Engl. Transl.), v. 9, no. 8, pp. 1038-1040, Journal Name: Sov. Phys. - Semicond. (Engl. Transl.), v. 9, no. 8, pp. 1038-1040; ISSN SPSEA
- Country of Publication:
- United States
- Language:
- English
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