Semiconductor nuclear radiation detector studies. Final report
In response to a problem that arose with regard to the availability of germanium for lithium-drifted germanium detectors (Ge(Li) detectors), a comprehensive program was undertaken aimed toward the development of a method for the rapid specification of germanium quality for nuclear radiation detector use, and the determination of factors affecting germanium quality. Measurements on a large number of germanium crystals, most of which had been rejected for detector use, and intercomparison of these measurements and the methods employed, led to significant developments in the measurement of lithium mobility and driftability, carrier trapping, and semiconductor defect and impurity determination via an improved infrared response (IRR) technique. The present improvement of the infrared response technique resulted in the observation of a number of discrete energy levels lying within the forbidden gap of germanium unobserved in previous studies. It was possible to assign the proper position of energy levels detected by IRR in the upper or lower half of the energy gap. It was thus possible, in some instances, to determine the nature of the defects responsible for the observed energy level from results reported in the literature. The goal of developing a method for the rapid specification of germanium quality was achieved. (GRA)
- Research Organization:
- National Bureau of Standards, Washington, D.C. (USA)
- NSA Number:
- NSA-33-029187
- OSTI ID:
- 4044862
- Report Number(s):
- COM--75-10411; NBSIR--74-626
- Country of Publication:
- United States
- Language:
- English
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