0.15 {mu}m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield v-band power MMICs

Conference · Sun Dec 31 00:00:00 EST 1995

OSTI ID:405393

Lai, R; Biedenbender, M; Lee, J ^[1]

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1. TRW, Inc., Redondo Beach, CA (United States); and others

The authors present a unique high yield, high performance 0.15 {mu}m HEMT production process which supports fabrication of MMW power MMICs up to 70 GHz. This process has been transferred successfully from an R&D process to TRW`s GaAs production line. This paper reports the on-wafer test results of more than 1300 V-band MMIC PA circuits measured over 24 wafers. The best 2-stage V-band power MMICs have demonstrated state-of-the-art performance with 9 dB power gain, 20% PAE and 330 mW output power. An excellent RF yield of 60% was achieved with an 8 dB power gain and 250 mW output power specification.

• OSTI ID: 405393
• Report Number(s): CONF-951097-; TRN: 96:004544-0031
• Resource Relation: Conference: IEEE gallium arsenide integrated circuits symposium: integrated circuits in GaAs, InP, and other compound semiconductors, San Diego, CA (United States), 29 Oct - 1 Nov 1995; Other Information: PBD: 1995; Related Information: Is Part Of GaAs IC symposium. Technical digest 1995; PB: 349 p.
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
INDIUM ARSENIDES
MANUFACTURING
PERFORMANCE
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
INTEGRATED CIRCUITS
POWER AMPLIFIERS
MICROWAVE RADIATION