Ion-implanted WN 0.25{mu}m gate MESFET fabricated using I-line photolithography for application to MMIC and digital IC
Conference
·
OSTI ID:405390
- Electronics and Telecommunications Research Institute, Taejon (Korea, Democratic People`s Republic of); and others
Straightforward WN 0.25{mu}m gate MESFET process based on direct ion-implantation and i-line photolithography with double exposure process has produced high performance MESFETs. The maximum transconductance of 600mS/mm and the k-factor of 450ms/Vmm were obtained. As high as 65GHz of cut-off frequency has been realized without any deembedding of parasitic effects. The MESFET shows the minimum noise figure of 0.87 dB and the associated gain of 9.97dB at 12GHz.
- OSTI ID:
- 405390
- Report Number(s):
- CONF-951097--
- Country of Publication:
- United States
- Language:
- English
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