Photovoltaic properties of n-CdSe/p-ZnTe heterojunctions

Journal Article · Sat May 15 04:00:00 EDT 1976 · Appl. Phys. Lett., v. 28, no. 10, pp. 593-595

DOI:https://doi.org/10.1063/1.88576· OSTI ID:4047255

Buch, F; Fahrenbruch, A L; Bube, R H

Measurements of the diffusion potential, depletion layer width, and bias dependence of quantum efficiency for n-CdSe/p-ZnTe heterojunctions are used to construct a band diagram for the junction and to propose a current transport model. A new value of the electron affinity of CdSe is indicated by measurements of the open-circuit voltage at low temperatures and high intensities. The saturation current density J$sub 0$ is controlled by a thermal activation energy of 0.8 eV, corresponding to electron flow to the interface where recombination occurs through interface states. Performance as photovoltaic cells is limited by the short diffusion length of holes in CdSe. (AIP)

• Research Organization: Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-028817
• OSTI ID: 4047255
• Journal Information: Appl. Phys. Lett., v. 28, no. 10, pp. 593-595, Journal Name: Appl. Phys. Lett., v. 28, no. 10, pp. 593-595; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

*PHOTOVOLTAIC CELLS-- EFFICIENCY
300600*
CADMIUM SELENIDES
DIRECT ENERGY CONVERSION
ELECTRONIC STRUCTURE
INTERFACES
N42100* --Engineering--Energy Conversion
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
TEMPERATURE DEPENDENCE
ZINC TELLURIDES