{Gamma}--L--X mixed symmetry of nitrogen-induced states in GaAs{sub 1-x}N{sub x} probed by resonant Raman scattering
A resonant Raman scattering study near the nitrogen-induced E{sub +} state in GaAs{sub 1-x}N{sub x} at 80 K with special emphasis on all the zone-boundary phonons is used to investigate the full symmetry of the E{sub +} state. We have observed that various phonons at the L- and X-zone boundaries not only emerge as strong and sharp Raman features for excitations near the E{sub +} transition but also exhibit the same intensity resonance enhancement as observed for the zone center phonons, longitudinal-optical ({Gamma}) and transverse-optical ({Gamma}). Our data provide strong evidence of significant L and X components in the wave function of the nitrogen-induced E{sub +} state in GaAs{sub 1-x}N{sub x}.
- Research Organization:
- Midwest Research Instute
- Sponsoring Organization:
- (US)
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 40277636
- Journal Information:
- Applied Physics Letters, Vol. 79, Issue 9; Other Information: DOI: 10.1063/1.1399010; Othernumber: APPLAB000079000009001297000001; 050135APL; PBD: 27 Aug 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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