Nitrogen-induced levels in GaAs{sub 1-x}N{sub x} studied with resonant Raman scattering

Journal Article · Mon May 15 00:00:00 EDT 2000 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.61.13687· OSTI ID:20216559

Cheong, Hyeonsik M ^[1]; Zhang, Yong ^[1]; Mascarenhas, Angelo ^[1]; Geisz, John F ^[1]

---

1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

Resonant Raman scattering is used to study the nature of the recently discovered nitrogen-induced level E{sub +} located in the conduction band of GaAs{sub 1-x}N{sub x} (0.001{<=}x{<=}0.022). Our data demonstrate that the E{sub +} state is derived from the nitrogen-induced {gamma}-L mixing of the bulk GaAs states and that it is not an isolated nitrogen impurity level. A broadening of the GaAs-like longitudinal-optical phonon line and an enhancement of the transverse-optical phonon line is observed near resonance, which is interpreted as being due to resonance with strongly localized states. (c) 2000 The American Physical Society.

• OSTI ID: 20216559
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 61, Issue 20; Other Information: PBD: 15 May 2000; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM NITRIDES
GALLIUM ARSENIDES
RAMAN SPECTRA
ELECTRONIC STRUCTURE
IMPURITIES
NITROGEN
EXPERIMENTAL DATA