Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases
- Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States)
- Hewlett-Packard Laboratories, Palo Alto, California 94304 (United States)
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
- IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598 (United States)
We have investigated the effects of buffer strain relaxation on the transport properties of two-dimensional electron gases (2DEGs). The 2DEGs consist of modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures grown lattice-mismatched to GaAs via compositionally step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers, with different composition gradients, or lattice-matched to InP. We find a variation in 2DEG electronic properties which occurs simultaneously with large differences in epilayer tilt and mosaic spread in the step-graded buffers. This indicates a correlation between the {ital mechanism} of buffer strain relaxation and the 2DEG transport properties. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- DOE Contract Number:
- AC02-76CH00016; FG02-85ER45183
- OSTI ID:
- 402432
- Journal Information:
- Journal of Applied Physics, Vol. 80, Issue 12; Other Information: PBD: Dec 1996
- Country of Publication:
- United States
- Language:
- English
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