Fabrication of metal{endash}oxide{endash}semiconductor devices with extreme ultraviolet lithography

Journal Article · Fri Nov 01 04:00:00 EST 1996 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.588618· OSTI ID:402323

Nguyen, K B; Cardinale, G F; Tichenor, D A; Kubiak, G D; Berger, K; Ray-Chaudhuri, A K; Perras, Y; Haney, S J; Nissen, R; Krenz, K; Stulen, R H ^[1]; Fujioka, H; Hu, C; Bokor, J ^[2]; Tennant, D M; Fetter, L A ^[3]

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1. Sandia National Laboratories, P.O. Box 969, MS 9409, Livermore, California 94551 (United States)
2. University of California, Berkeley, Cory Hall, Berkeley, California 94720 (United States)
3. Bell Laboratories/Lucent Technologies, Holmdel, New Jersey 07733 (United States)

This article reports results from the successful fabrication of metal{endash}oxide{endash}semiconductor (MOS) devices with extreme ultraviolet lithography. {ital n}-type MOS transistors with gate lengths of 0.1 {mu}m were fabricated and demonstrated good device characteristics. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported. {copyright} {ital 1996 American Vacuum Society}

• OSTI ID: 402323
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 14; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALIGNMENT
ARSENIC ADDITIONS
BORON ADDITIONS
CAPACITORS
DOPED MATERIALS
EXTREME ULTRAVIOLET RADIATION
FABRICATION
LITHOGRAPHY
MASKING
MOS TRANSISTORS
PERFORMANCE
SILICON
SILICON OXIDES