Improvements in tunability of (Ba{sub 0.5}Sr{sub 0.5})TiO{sub 3} thin films by use of metalorganic chemical vapor deposited (Ba,Sr)RuO{sub 3} interfacial layers

Journal Article · Mon Aug 13 04:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1394723· OSTI ID:40230778

Jeon, Young-Ah; Choi, Eun-Suck; Seo, Tae-Suck; Yoon, Soon-Gil

The conducting oxide (Ba,Sr)RuO{sub 3} (BSR), which offers an appropriate match in structure with (Ba,Sr)TiO{sub 3} (BST), was investigated as an interfacial layer to obtain a high tunability and high dielectric constant in BST films. The (100)-textured BST films deposited onto BSR interfacial layers showed smoother smaller grain size than those without BSR layers. The tunability and dielectric constant of the BST films increased with increasing BSR seed layer thickness and showed {approx}70% tunability and a dielectric constant of 1300 at interfacial layer of 150 Aa. The tunability and dielectric constant of BST films increased nearly two times and two and a half times, respectively, as much as that of BST films without BSR interfacial layers. The higher tunability and dielectric constant have been attributed to the suppression of low-dielectric layer formation and the reduced thermal stress by lattice mismatch. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40230778
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 79; ISSN 0003-6951
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
GRAIN SIZE
OXIDES
PHYSICS
SEEDS
THICKNESS
THIN FILMS