Epitaxial-grade polycrystalline Pb(Zr,Ti)O{sub 3} film deposited at low temperature by pulsed-metalorganic chemical vapor deposition
Epitaxial-grade polycrystalline Pb(Zr,Ti)O{sub 3} (PZT) films were deposited at 415{sup o}C by source- gas-pulsed-introduced metalorganic chemical vapor deposition. The polycrystalline PZT film with Zr/(Zr+Ti)=0.35 which was prepared on (111)Pt/Ti/SiO{sub 2}/Si substrate showed highly (100)- and (001)-preferred orientations. Well-saturated ferroelectricity with a remanent polarization (P{sub r}) and coercive field of 41.4 {mu}C/cm{sup 2} and 78.5 kV/cm, respectively, was obtained. This P{sub r} value is almost the same as that of epitaxially grown films at 580{sup o}C with the same composition and orientations taking into account of the volume fraction of (100) and (001) orientations. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230774
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 79; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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