Si/6H--SiC(0001): An unexpected cubic 4 x 3 Si phase overlayer
We investigate Si deposition on the 6H--SiC(0001) 3 x 3 surface reconstruction by atom-resolved scanning tunneling microscopy. Upon thermal annealing, the Si thin film forms an unexpected structure having dimer rows in a cubic 4 x 3 surface array. Such a 4 x 3 Si phase has a very open surface very likely being at the origin of the exceptionally high reactivity to oxygen of the Si/6H--SiC(0001) system. These findings are relevant in silicon carbide oxidation. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230698
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 79; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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