Si/6H--SiC(0001): An unexpected cubic 4 x 3 Si phase overlayer
We investigate Si deposition on the 6H--SiC(0001) 3 x 3 surface reconstruction by atom-resolved scanning tunneling microscopy. Upon thermal annealing, the Si thin film forms an unexpected structure having dimer rows in a cubic 4 x 3 surface array. Such a 4 x 3 Si phase has a very open surface very likely being at the origin of the exceptionally high reactivity to oxygen of the Si/6H--SiC(0001) system. These findings are relevant in silicon carbide oxidation. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230698
- Journal Information:
- Applied Physics Letters, Vol. 79, Issue 6; Other Information: DOI: 10.1063/1.1389510; Othernumber: APPLAB000079000006000767000001; 008131APL; PBD: 6 Aug 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
Si- and C-rich structure of the 6{ital H}-SiC(0001) surface
Atomic structure of Si-rich 6H-SiC(0001)-2x2 surface
Damage Accumulation and Annealing in 6H-SiC Irradiated with Si+
Journal Article
·
Tue Jul 01 00:00:00 EDT 1997
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
·
OSTI ID:40230698
Atomic structure of Si-rich 6H-SiC(0001)-2x2 surface
Journal Article
·
Sun May 15 00:00:00 EDT 2005
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:40230698
+4 more
Damage Accumulation and Annealing in 6H-SiC Irradiated with Si+
Journal Article
·
Thu Oct 01 00:00:00 EDT 1998
· Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 143(3):333-341
·
OSTI ID:40230698
+1 more