Resonant donor defect as a cause of compensation in p-type ZnSe: Photoluminescence studies under hydrostatic pressure
Journal Article
·
· Physical Review B
We report the presence, in heavily doped and compensated ZnSe:N, of a resonant donor defect having an activation energy of {approx_equal}120--160 meV. The donor-acceptor pair photoluminescence observed in these materials is quenched at pressures higher than 25 kbar. We attribute this quenching to the shift of a resonant defect level into the band gap. A split N-N interstitial on a Se site is proposed as a strong candidate for the observed defect. We further propose that this species is the dominant donor defect at high p-doping levels and, consequently, is responsible for the potential fluctuations observed in this material. Moreover, a very important point shown by the present ZnSe:N data is that different compensating species will dominate in different ranges of N concentrations.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205483
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 16 Vol. 63; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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