Properties of highly conducting nitrogen-plasma-doped ZnSe:N thin films

Journal Article · Tue Mar 01 04:00:00 EST 1994 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/BF02670631· OSTI ID:478432

Bowers, K A; Yu, Z; Gossett, K J ^[1]

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1. North Carolina State Univ., Raleigh, NC (United States); and others

Values for the acceptor ionization energy, E{sub a}, and compensating donor ionization energy, E{sub d}, have been obtained from an analysis of variable-temperature photoluminescence data taken for a series of highly conducting nitrogen-plasma doped ZnSe thin films. E{sub a} was found to be highly temperature dependent, with values ranging from E{sub a} {approximately}110 meV at low temperatures to {approximately}60 meV at room temperature. The compensating donor ionization energy ranged from E{sub d} {approximately}31 meV at low temperatures to {approximately}24 meV at room temperature. These results provide clear evidence of the nonhydrogenic nature of the nitrogen acceptor state in heavily doped ZnSe:N thin films and suggest that interstitial bonding of N, at two or more stable sites, may play a central role in the p-type doping and compensation of this material at high doping levels. 27 refs., 4 figs.

• Sponsoring Organization: USDOE
• OSTI ID: 478432
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 3 Vol. 23; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
EPITAXY
IONIZATION POTENTIAL
NITROGEN
PHOTOLUMINESCENCE
TEMPERATURE DEPENDENCE
THIN FILMS
ZINC SELENIDES