Pressure dependence of the photoluminescence spectra of nitrogen-doped ZnSe: Evidence of compensating deep donors

Journal Article · Mon Aug 22 04:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112207· OSTI ID:7004973

Chen, A L; Walukiewicz, W ^[1]; Haller, E E ^[2]

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1. Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
2. Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States) Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States)

We have measured the photoluminescence spectra of nitrogen-doped ZnSe under hydrostatic pressure. From the pressure dependence of the peak positions of the acceptor-bound exciton and donor-acceptor-pair emissions, we show that highly doped samples have two donor-acceptor-pair transitions, one involving shallow and one involving deep donors. Our results confirm that one mechanism limiting the free hole concentration is compensation from this deep donor.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7004973
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:8; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOYS
CARRIER DENSITY
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRONIC STRUCTURE
LUMINESCENCE
MATERIALS
NITROGEN ADDITIONS
PHOTOLUMINESCENCE
PRESSURE DEPENDENCE
SELENIDES
SELENIUM COMPOUNDS
ZINC COMPOUNDS
ZINC SELENIDES