Residual arsenic site in oxidized Al{sub x}Ga{sub 1-x}As (x=0.96)
X-ray absorption fine-structure spectroscopy is used to determine the site of residual As in wet-oxidized Al{sub 0.96}Ga{sub 0.04}As. In a {approx}0.5-{mu}m-oxide film removed from its GaAs substrate, the remaining As atoms are found to be coordinated with oxygen in the form of amorphous-As oxides, with a mixture of {approx}80%As{sup 3+} and {approx}20%As{sup 5+} sites that are locally similar to As{sub 2}O{sub 3} and As{sub 2}O{sub 5}. No evidence of interstitial or substitutional As, As precipitates, or GaAs is seen, implying that less than 10% of the As atoms are in these forms.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205290
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 78; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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