Synthesis and room-temperature ferromagnetism of Zn{sub 0.96}Mn{sub 0.04}O/ZnO coaxial nanocable and Zn{sub 0.96}Mn{sub 0.04}O film
- Department of Physics, Wuhan University, Wuhan 430072, People's Republic of China and q-Psi, Hanyang University, Seoul 133-791 (Korea, Republic of)
- q-Psi and Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of)
- Department of Physics, and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072 (China)
Zn{sub 0.96}Mn{sub 0.04}O/ZnO coaxial nanocable and Zn{sub 0.96}Mn{sub 0.04}O film were prepared by two-step method and magnetron sputtering, respectively. The x-ray diffraction analysis reveals that Mn is incorporated well into the wurtzite ZnO without formation of Mn or Mn oxide. The high resolution transmission electron microscopy image and the selected-area electron diffraction pattern demonstrate that both ZnO and Zn{sub 0.96}Mn{sub 0.04}O layers are single crystalline and an epitaxial growth is achieved between Zn{sub 0.96}Mn{sub 0.04}O and ZnO in the coaxial nanocable. The magnetic property measurements show that both Zn{sub 0.96}Mn{sub 0.04}O/ZnO nanocable and Zn{sub 0.96}Mn{sub 0.04}O film are ferromagnetic at room temperature. Moreover, the saturated magnetization and the coercive field of Zn{sub 0.96}Mn{sub 0.04}O/ZnO coaxial nanocable are larger than those of Zn{sub 0.96}Mn{sub 0.04}O film.
- OSTI ID:
- 21137310
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 7; Conference: 52. annual conference on magnetism and magnetic materials, Tampa, FL (United States), 5-9 Nov 2007; Other Information: DOI: 10.1063/1.2840018; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
COAXIAL CABLES
COERCIVE FORCE
CRYSTAL GROWTH
DEPOSITION
ELECTRON DIFFRACTION
EPITAXY
FERROMAGNETIC MATERIALS
FERROMAGNETISM
LAYERS
MAGNETIC PROPERTIES
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MANGANESE COMPOUNDS
MONOCRYSTALS
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZINC OXIDES