Electrophysical Properties of Cd0.96Mn0.04Te0.96Se0.04 Surface-Barrier Diodes

Sklyarchuk, V.; Kopach, Oleh; Fochuk, Petro M.; Bolotnikov, Aleksey E.; James, Ralph B.

doi:10.1109/TNS.2024.3436525

Electrophysical Properties of Cd_0.96Mn_0.04Te_0.96Se_0.04 Surface-Barrier Diodes

Journal Article · Thu Aug 01 00:00:00 EDT 2024 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2024.3436525· OSTI ID:2998364

Sklyarchuk, V. ^[1]; ^[1]; ^[1]; ^[2]; ^[3]

Chernivtsi National University (Ukraine)
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Savannah River National Laboratory (SRNL), Aiken, SC (United States)

Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd_0.96Mn_0.04Te_0.96Se_0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce–Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. Here, the resistivity of p-Cd_0.96Mn_0.04Te_0.96Se_0.04 crystals was equal to ρ ≈ 400 Ω⋅cm and was determined from the I–V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity ρ=ρ(T) was equal to ΔE≈0.24 eV. The forbidden gap of p-Cd_0.96Mn_0.04Te_0.96Se_0.04 crystals, found from the optical absorption spectra, was equal to E_g=1.495 eV.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Chernivtsi National University (Ukraine); Savannah River National Laboratory (SRNL), Aiken, SC (United States)

Sponsoring Organization:: Simons Foundation; USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation

Grant/Contract Number:: 89303321CEM000080

OSTI ID:: 2998364

Journal Information:: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 9 Vol. 71; ISSN 0018-9499; ISSN 1558-1578

Publisher:: Institute of Electrical and Electronics Engineers (IEEE)Copyright Statement

Country of Publication:: United States

Language:: English

References (15)

Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors Fiederle, M.; Ebling, D.; Eiche, C. Journal of Crystal Growth, Vol. 138, Issue 1-4 https://doi.org/10.1016/0022-0248(94)90863-x	journal	April 1994
Optical detection of cyclotron resonance of electron and holes in CdTe Dang, Le Si; Neu, G.; Romestain, R. Solid State Communications, Vol. 44, Issue 8 https://doi.org/10.1016/0038-1098(82)91082-1	journal	November 1982
Evaluation of CdTexSe1−x crystals grown from a Te-rich solution Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S. Journal of Crystal Growth, Vol. 389 https://doi.org/10.1016/j.jcrysgro.2013.11.074	journal	March 2014
Correlation between Te inclusions and the opto-electrical properties of CdMnTe and CdMgTe single crystals Yu, Pengfei; Gao, Pandeng; Shao, Tingquan Journal of Crystal Growth, Vol. 571 https://doi.org/10.1016/j.jcrysgro.2021.126259	journal	October 2021
CdTe-based crystals with Mg, Se, or Mn as materials for X and gamma ray detectors: Selected physical properties Mycielski, Andrzej; Wardak, Aneta; Kochanowska, Dominika Progress in Crystal Growth and Characterization of Materials, Vol. 67, Issue 4 https://doi.org/10.1016/j.pcrysgrow.2021.100543	journal	November 2021
CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors Eisen, Y.; Shor, A. Journal of Crystal Growth, Vol. 184-185 https://doi.org/10.1016/s0022-0248(98)80270-4	journal	February 1998
Impact of selenium addition to the cadmium-zinc-telluride matrix for producing high energy resolution X-and gamma-ray detectors Roy, Utpal N.; Camarda, Giuseppe S.; Cui, Yonggang Scientific Reports, Vol. 11, Issue 1 https://doi.org/10.1038/s41598-021-89795-z	journal	May 2021
Research Update: Point defects in CdTe _x Se _1−x crystals grown from a Te-rich solution for applications in detecting radiation Gul, R.; Roy, U. N.; Bolotnikov, A. E. APL Materials, Vol. 3, Issue 4 https://doi.org/10.1063/1.4917270	journal	April 2015
Charge collection properties of a CdTe Schottky diode for x- and γ-rays detectors Kosyachenko, L. A.; Maslyanchuk, O. L.; Gnatyuk, V. A. Semiconductor Science and Technology, Vol. 23, Issue 7 https://doi.org/10.1088/0268-1242/23/7/075024	journal	May 2008
Optical Absorption Edge in CdTe: Experimental Marple, D. T. F. Physical Review, Vol. 150, Issue 2 https://doi.org/10.1103/PhysRev.150.728	journal	October 1966
Optical Detection of Cyclotron Resonance in Semiconductors Romestain, R.; Weisbuch, C. Physical Review Letters, Vol. 45, Issue 25 https://doi.org/10.1103/PhysRevLett.45.2067	journal	December 1980
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics Sah, Chih-tang; Noyce, Robert; Shockley, William Proceedings of the IRE, Vol. 45, Issue 9 https://doi.org/10.1109/JRPROC.1957.278528	journal	September 1957
Optimizing CdZnTeSe Frisch-Grid Nuclear Detector for Gamma-Ray Spectroscopy Egarievwe, Stephen U.; Roy, Utpal N.; Agbalagba, Ezekiel O. IEEE Access, Vol. 8 https://doi.org/10.1109/access.2020.3012040	journal	January 2020
Advances in the crystal growth and device fabrication technology of CdZnTe room temperature radiation detectors Szeles, C. IEEE Transactions on Nuclear Science, Vol. 51, Issue 3 https://doi.org/10.1109/tns.2004.829391	journal	June 2004
Effect of different types of surface treatment on the photoelectric and optical properties of CdTe Baidullaeva, A.; Vlasenko, A. I.; Mozol’, P. E. Semiconductors, Vol. 31, Issue 12 https://doi.org/10.1134/1.1187301	journal	December 1997

Similar Records

Electro-physical properties of surface-barrier diodes on low-resistance n-Cd_0.96Mn_0.04Te_0.96Se_0.04 crystals

Conference · Fri Oct 04 00:00:00 EDT 2024 · Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXVI · OSTI ID:2506709

Synthesis and room-temperature ferromagnetism of Zn{sub 0.96}Mn{sub 0.04}O/ZnO coaxial nanocable and Zn{sub 0.96}Mn{sub 0.04}O film

Journal Article · Tue Apr 01 00:00:00 EDT 2008 · Journal of Applied Physics · OSTI ID:21137310

Mechanisms contributing to dark current across metal/CdMnTe/metal structures

Journal Article · Sun Sep 08 20:00:00 EDT 2019 · Proceedings of SPIE - The International Society for Optical Engineering · OSTI ID:1604906

Related Subjects

42 ENGINEERING
Cd0.96Mn0.04Te0.96Se0.04
Conductivity
Crystals
Current measurement
Resistance
Semiconductor device measurement
Surface treatment
Temperature measurement
generation-recombination currents
ohmic contact
rectifying contact
single crystals

Electrophysical Properties of Cd0.96Mn0.04Te0.96Se0.04 Surface-Barrier Diodes

Citation Formats

References (15)

Similar Records

Related Subjects

Electrophysical Properties of Cd_0.96Mn_0.04Te_0.96Se_0.04 Surface-Barrier Diodes