Mechanisms contributing to dark current across metal/CdMnTe/metal structures

Sklyarchuk, Valerii M.; Fochuk, Petro; Solodin, Serhii; Zakharuk, Zinaida; Rarenko, Anna; Bolotnikov, A. E.; James, Ralph B.

doi:10.1117/12.2530444

Mechanisms contributing to dark current across metal/CdMnTe/metal structures

Journal Article · Mon Sep 09 00:00:00 EDT 2019 · Proceedings of SPIE - The International Society for Optical Engineering

DOI:https://doi.org/10.1117/12.2530444· OSTI ID:1604906

Sklyarchuk, Valerii M. ^[1]; Fochuk, Petro ^[1]; Solodin, Serhii ^[1]; Zakharuk, Zinaida ^[1]; Rarenko, Anna ^[1]; Bolotnikov, A. E. ^[2]; James, Ralph B. ^[3]

Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Brookhaven National Lab. (BNL), Upton, NY (United States)

The study of the electro-physical properties of n-type semi-insulating crystals of indium-doped Cd(Mn)Te solid solution with a resistivity ~ (4÷5)×10¹⁰ Ohm×cm at T = 300 K was carried out. The structures both with an ohmic (In/Cd(Mn)Te/In) contacts and with the rectifying (Ni/Cd(Mn)Te/In) contact were fabricated. It was found that for the Ni/Cd(Mn)Te/In structure, the main mechanisms of charge transport were: the generation currents in the space-charge region, space-charge limited currents (SCLC) at high voltages, and the Ohm’s law was valid only on initial section the of the volt-ampere characteristics (I-VC). Calculation of the generation current dependence on the voltage according to the theory of Sah-Noyce-Shockley was carried out. For the In/Cd(Mn)Te/In structure it was observed the I-VC initial section, where the Ohm’s law was implemented, and the SCLCs with the participation of deep centers (traps) in semiinsulating crystal - at greater voltages. The concentration of deep centers (Nt ~ 7.4×10¹⁰ cm^-3 ) responsible for the trap mechanism in SCLC In/Cd(Mn)Te/In structures was calculated. The energy position Et of the deep levels was determined (provided that the energy was calculated from the valence band edge, Et = 0.89÷0.9 eV). It was discussed and grounded the assumption that SCLC was the main mechanism limiting the operating voltages and, consequently, the use of Cd(Mn)Te-based ionizing-radiation detectors with ohmic contacts.

Research Organization:: Savannah River National Lab (SRNL), Aiken, SC (United States); Savannah River Site (SRS), Aiken, SC (United States)

Sponsoring Organization:: USDOE Office of Environmental Management (EM)

Grant/Contract Number:: AC09-08SR22470

OSTI ID:: 1604906

Report Number(s):: SRNL-STI--2019-00484

Journal Information:: Proceedings of SPIE - The International Society for Optical Engineering, Journal Name: Proceedings of SPIE - The International Society for Optical Engineering Vol. 11114; ISSN 0277-786X

Publisher:: SPIECopyright Statement

Country of Publication:: United States

Language:: English

References (12)

Fabrication of CdMnTe semiconductor as radiation detector Najam, L. A.; Jamil, N. Y.; Yousif, R. M. Indian Journal of Physics, Vol. 86, Issue 4 https://doi.org/10.1007/s12648-012-0051-0	journal	April 2012
Compensated donors in semi-insulating Cd1−xMnxTe:In crystals Nykoniuk, Ye.; Solodin, S.; Zakharuk, Z. Journal of Crystal Growth, Vol. 500 https://doi.org/10.1016/j.jcrysgro.2018.08.013	journal	October 2018
Relationship between high resistivity and the deep level defects in CZT:In Nan, Ruihua; Jie, Wanqi; Zha, Gangqiang Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 705 https://doi.org/10.1016/j.nima.2012.12.081	journal	March 2013
Low leakage current Ni/CdZnTe/In diodes for X/ γ -ray detectors Sklyarchuk, V. M.; Gnatyuk, V. A.; Pecharapa, W. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 879 https://doi.org/10.1016/j.nima.2017.10.016	journal	January 2018
Semiconductors and Semimetals, Vol. 13 (Cadmium Telluride) Zanio, K.; Pollak, Fred H. Physics Today, Vol. 31, Issue 8 https://doi.org/10.1063/1.2995143	journal	August 1978
Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors Bolotnikov, A. E.; Camarda, G. S.; Chen, E. Journal of Applied Physics, Vol. 120, Issue 10 https://doi.org/10.1063/1.4962540	journal	September 2016
Gamma-Ray Response of Semi-Insulating CdMnTe Crystals Kim, KiHyun; Cho, ShinHang; Suh, JongHee IEEE Transactions on Nuclear Science, Vol. 56, Issue 3 https://doi.org/10.1109/TNS.2009.2015662	journal	June 2009
Improvement of the Productivity in the THM Growth of CdTe Single Crystal as Nuclear Radiation Detector Shiraki, Hiroyuki; Funaki, Minoru; Ando, Yukio IEEE Transactions on Nuclear Science, Vol. 57, Issue 1 https://doi.org/10.1109/TNS.2009.2035316	journal	February 2010
Investigation of the Charge Collection Efficiency of CdMnTe Radiation Detectors Rafiei, R.; Boardman, D.; Sarbutt, A. IEEE Transactions on Nuclear Science, Vol. 59, Issue 3 https://doi.org/10.1109/TNS.2012.2190941	journal	June 2012
New Approaches for Making Large-Volume and Uniform CdZnTe and CdMnTe Detectors Kim, K. H.; Bolotnikov, A. E.; Camarda, G. S. IEEE Transactions on Nuclear Science, Vol. 59, Issue 4 https://doi.org/10.1109/TNS.2012.2202917	journal	August 2012
High-Purity CdMnTe Radiation Detectors: A High-Resolution Spectroscopic Evaluation Rafiei, R.; Reinhard, M. I.; Kim, K. IEEE Transactions on Nuclear Science, Vol. 60, Issue 2 https://doi.org/10.1109/TNS.2013.2243167	journal	April 2013
Advantages of a Special Post-Growth THM Program for the Reduction of Inclusions in CdTe Crystals Fochuk, P.; Zakharuk, Z.; Nykonyuk, Ye. IEEE Transactions on Nuclear Science, Vol. 63, Issue 3 https://doi.org/10.1109/TNS.2016.2548425	journal	June 2016

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