Space charge limited current conduction in Bi{sub 2}Te{sub 3} thin films
- PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore-029, Tamil Nadu (India)
- Department of Physics, ITESM-Campus, Monterrey, N.L (Mexico)
Bi{sub 2}Te{sub 3} is known for its large thermoelectric coefficients and is widely used as a material for Peltier devices. Bi{sub 2}Te{sub 3} thin films with thicknesses in the range 125-300 A have been prepared by Flash Evaporation at a pressure of 10{sup -5} m bar on clean glass substrates at room temperature. An Al-Bi{sub 2}Te{sub 3}-Al sandwich structure has been used for electrical conduction properties in the temperature range 303 to 483 K. I-V characteristics showed Ohmic conduction in the low voltage region. In the higher voltage region, a Space Charge Limited Conduction (SCLC) takes place due to the presence of the trapping level. The transition voltage (V{sub t}), between the Ohmic and the SCLC condition was proportional to the square of thickness. Further evidence for this conduction process was provided by the linear dependence of V {sub t} on t {sup 2} and log J on log t. The hole concentration in the films were found to be n {sub 0} = 1.65 * 10{sup 10} m{sup -3}. The carrier mobility increases with increasing temperature whereas the density of trapped charges decreases with increasing temperature. The barrier height decreases with an increase in temperature. The increase in the trapping concentration V {sub t} is correlated with ascending the degree of preferred orientation of the highest atomic density plane. The activation energy was estimated and the values found to decrease with increasing applied voltage. The zero field value of the activation energy is found to be 0.4 eV.
- OSTI ID:
- 21003591
- Journal Information:
- Materials Characterization, Vol. 58, Issue 8-9; Conference: 14. International materials research congress: Symposium 7, Cancun (Mexico), 21-25 Aug 2005; Other Information: DOI: 10.1016/j.matchar.2006.11.025; PII: S1044-5803(06)00338-X; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nano-crystalline p-ZnGa{sub 2}Te{sub 4}/n-Si as a new heterojunction diode
Charge carrier transport mechanisms in perovskite CdTiO{sub 3} fibers