Interfacial arsenic from wet oxidation of Al{sub x}Ga{sub 1-X}As/GaAs: Its effects on electronic properties and new approaches to MIS device fabrication
- and others
Three important oxidation regimes have been identified in the temporal evolution of the wet thermal oxidation of Al{sub x}Ga{sub 1-x}As (1 {ge} x {ge} 0.90) on GaAs: (1) oxidation of Al and Ga in the Al{sub x}Ga{sub 1-x}As alloy to form an amorphous oxide layer, (2) oxidative formation and elimination of elemental As (both crystalline and amorphous) and of amorphous As{sub 2}O{sub 3}, and (3) crystallization of the oxide film. Residual As can result in up to a 100-fold increase in leakage current and a 30% increase in the dielectric constant and produce strong Fermi-level pinning and high leakage currents at the oxidized Al{sub x}Ga{sub 1-x}As/GaAs interface. The presence of thermodynamically-favored interfacial As may impose a fundamental limitation on the application of AlGaAs wet oxidation for achieving MIS devices in the GaAs material system.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 431179
- Report Number(s):
- SAND--97-0152C; CONF-961202--21; ON: DE97002459
- Country of Publication:
- United States
- Language:
- English
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