Effect of polarization fields on transport properties in AlGaN/GaN heterostructures

Journal Article · Thu Feb 01 04:00:00 EST 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1339858· OSTI ID:40204920

Hsu, L; Walukiewicz, W

We have calculated transport properties of unintentionally doped n-type AlGaN/GaN heterostructures. Using a thermodynamic model of defect formation, we have modeled the charge transfer process in such heterostructures, obtaining good agreement with experiment. The large polarization fields in the heterostructure dramatically lower the formation energy of the surface defects, leading to the observed extremely large two-dimensional electron gas concentrations. Calculations of the low temperature mobilities were also performed, showing that alloy disorder and, in some cases, interface roughness, are the dominant low-temperature carrier scattering mechanisms. At low temperatures a maximum intrinsic mobility of about 10{sup 5}cm{sup 2}/Vs is predicted for these heterostructures.

• Sponsoring Organization: (US)
• OSTI ID: 40204920
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 89; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
DEFECTS
ELECTRON GAS
PHYSICS
POLARIZATION
ROUGHNESS
SCATTERING
THERMODYNAMIC MODEL
TRANSPORT