Theoretical transport studies of {ital p}-type GaN/AlGaN modulation-doped heterostructures
- Center for Innovation in Learning, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
We have calculated hole transfer and low-temperature mobilities in {ital p}-type GaN/AlGaN modulation-doped heterostructures. Although substantial {ital p}-type conduction is difficult to achieve in bulk nitrides, the strain-induced polarization field can greatly enhance the transfer of holes from relatively deep Mg acceptors in the AlGaN barrier into the GaN well. The calculations predict formation of a two-dimensional hole gas with densities greater than 10{sup 12} cm{sup {minus}2} and with low-temperature mobilities in excess of 10{sup 4} cm{sup 2}/Vthinsps. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 336603
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 74; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Scattering induced by Al segregation in AlGaN/GaN heterostructures
Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
Journal Article
·
Mon Aug 17 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:22489111
Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
Journal Article
·
Mon Apr 21 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22273546
Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
Journal Article
·
Wed Jan 31 23:00:00 EST 2001
· Journal of Applied Physics
·
OSTI ID:40204920